NPN resistor-equipped transistors; R1 = 47 k ohm, R2 = 47 k ohm

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：93.77 Kbytes 页数：14 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：188.97 Kbytes 页数：14 Pages

恩XP

丝印：E7；Package：SC-101；NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.53645 Mbytes 页数：17 Pages

NEXPERIA

安世

NPN resistor-equipped transistors

文件：760.42 Kbytes 页数：17 Pages

PHI

PHI

丝印：00111100；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

文件：966.26 Kbytes 页数：12 Pages

NEXPERIA

安世

NPN resistor-equipped transistor; R1 = 47 k廓, R2 = 47 k廓

文件：725.69 Kbytes 页数：11 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144EMB.\n • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n;

Nexperia

安世

Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW SOT883

Nexperia USA Inc.

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW 3DFN

Nexperia USA Inc.