丝印：DZ；Package：SC-101；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：260.769 Kbytes 页数：13 Pages

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PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features * Built-in bias resistors * Simplifies circuit design * 100 mA output current capability * Reduces component count * Reduces pick and place costs

文件：205.18 Kbytes 页数：13 Pages

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丝印：DZ；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. PNP complement: PDTA124XM 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Red

文件：202.76 Kbytes 页数：9 Pages

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NPN resistor-equipped transistors; R1 = 22 kohm, R2 = 47 kohm

General description NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General-purpose switching and amplification ■ Circuit drivers ■ Inverter and interfac

文件：83.75 Kbytes 页数：12 Pages

PHI

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NPN resistor-equipped transistors; R1 = 22 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General-purpose switching and amplification ■ Circuit drivers ■ Inverter and interfac

文件：147.19 Kbytes 页数：12 Pages

恩XP

丝印：00111001；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 22 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：619.72 Kbytes 页数：12 Pages

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NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm

NPN Resistor-Equipped Transistors (RET) family. • Built-in bias resistors\n• Reduces component count\n• Simplifies circuit design\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

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NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA124XMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

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Package：SC-101，SOT-883；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006-3

Nexperia USA Inc.

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006B-3

Nexperia USA Inc.