NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

丝印：00110110；Package：DFN1006B-3；NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓

文件：749.08 Kbytes 页数：12 Pages

NEXPERIA

安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V DFN1006B-3

Nexperia USA Inc.

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm

General description NPN Resistor-Equipped Transistors (RET) family. Features ■ Built-in bias resistors ■ Reduces component count ■ Simplifies circuit design ■ Reduces pick and place costs Applications ■ General-purpose switching and amplification ■ Circuit drivers

文件：79.48 Kbytes 页数：11 Pages

PHI

PHI

PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs

文件：237.95 Kbytes 页数：19 Pages

NEXPERIA

安世