NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：92.63 Kbytes 页数：14 Pages

PHI

PHI

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：181.16 Kbytes 页数：14 Pages

恩XP

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：92.63 Kbytes 页数：14 Pages

PHI

PHI

50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. PNP complement: PDTA123JM 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit desig

文件：818.02 Kbytes 页数：12 Pages

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