PNP resistor-equipped transistors; R1 = 47 k廓, R2 = open

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning”for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose

文件：180.83 Kbytes 页数：14 Pages

恩XP

PNP resistor-equipped transistors; R1 = 47 kW-ohm, R2 = open

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpos

文件：91.21 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：00101100；Package：DFN1006B-3；PNP resistor-equipped transistor; R1 = 47 k廓, R2 = open

文件：724.27 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

DESCRIPTION\nPNP resistor-equipped transistor (see “Simplified outline, symbol and pinning”for package details).FEATURES\n• Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n\nAPPLICATIONS\n• General purpose switching and amplifica • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.;

恩XP

恩智浦

PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open

PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). • Built-in bias resistors\n• Simplified circuit design\n• Reduction of component count\n• Reduced pick and place costs.\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144TMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司