PNP resistor-equipped transistors; R1 = 47 k廓, R2 = 47 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning”for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and ampli

文件：181.29 Kbytes 页数：14 Pages

恩XP

NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.53645 Mbytes 页数：17 Pages

NEXPERIA

安世

丝印：07；Package：SOT23；PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.53812 Mbytes 页数：17 Pages

NEXPERIA

安世

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：50.52 Kbytes 页数：8 Pages

PHI

飞利浦

PNP resistor-equipped transistors

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：92.85 Kbytes 页数：14 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：07；Package：SOT23；PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC144ET-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component c

文件：211.45 Kbytes 页数：11 Pages

NEXPERIA

安世

PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC144ET-Q

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.