PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

General description PNP resistor-equipped transistors. Features ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs Applications ■ General purpose switching and amplification ■ Inverter and interface circuits ■ Circuit drivers

文件：110.18 Kbytes 页数：17 Pages

恩XP

丝印：00100001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 100 k廓, R2 = open

文件：616.56 Kbytes 页数：12 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open

PNP resistor-equipped transistors. • Built-in bias resistors\n• Reduces component count\n• Simplifies circuit design\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115TMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

Nexperia

安世

PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

恩XP

Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V SOT323

Nexperia USA Inc.