丝印：03；Package：SOT23；50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114ET-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

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PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTC114ET-Q • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT323 plastic package. NPN complement: PDTC114EU. FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for spac

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