PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

文件：121.85 Kbytes 页数：18 Pages

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PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

文件：121.85 Kbytes 页数：18 Pages

恩XP

丝印：00011101；Package：SOT883B；PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓

文件：628.36 Kbytes 页数：13 Pages

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PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

文件：121.85 Kbytes 页数：18 Pages

恩XP

PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

文件：121.85 Kbytes 页数：18 Pages

恩XP

PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

文件：121.85 Kbytes 页数：18 Pages

恩XP

PNP resistor-equipped transistors; R1 = 1 kW, R2 = 10 kW

恩XP

PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm

PNP resistor-equipped transistors. • Built-in bias resistors\n• Reduces component count\n• Simplifies circuit design\n• Reduces pick and place costs\n• AEC-Q101 qualified;

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PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC113ZMB. • 100 mA output current capability\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm;

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Package：3-XFDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V DFN1006B-3

Nexperia USA Inc.