PDTA114EK

PNP resistor-equipped transistor

DESCRIPTION PNPresistor-equippedtransistorinanSC-59plasticpackage.NPNcomplement:PDTC114EK. FEATURES •Built-inbiasresistorsR1andR2(typ.10kΩeach) •Simplificationofcircuitdesign •Reducesnumberofcomponentsandboardspace. APPLICATIONS •Especiallysuitableforspace

PHI

PDTA114EM

丝印：E5；Package：SOT-883；PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)familyinsmallSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■100mAoutputcurrentcapability ■Built-inbiasresistors ■Simplifiescircuitdesign ■Reducescomponentcount ■Reducespicka

PDTA114EM

丝印：E5；Package：DFN1006-3；50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC114EM 2.Featuresandbenefits .100mAoutputcurrentcapability .Built-inbiasresistors .Simplifiescircuitdesig

PDTA114EM

NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PDTA114EMB

丝印：00011001；Package：SOT883B；PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC114EMB Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiastransistors ■

PDTA114EQA

丝印：110111；Package：DFN1010D-3；50 V, 100 mA PNP resistor-equipped transistors

Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■reducedpickandplacecosts

PDTA114EQA

50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm AEC-Q101qualified SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

PDTA114EQA

丝印：110111；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits 100mAoutputcurrentcapability built-inbiasresistors simplifiescircuitdesign reducescomponentcount reducedpickandplacecosts lowpackageheightof0.37mm AEC-Q101qualified suitableforAutomaticOpticalInspection (AOI)ofsolderjoint

PDTA114EQA

丝印：110111；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

1.1Generaldescription 100mAPNPResistor-EquippedTransistor(RET)familyinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. 1.2Featuresandbenefits 1.3Applications Table1.Productoverview TypenumberR1

PDTA114EQB

50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint