MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes

Potens

博盛半导体

25V N-Channel MOSFETs

Features - 25V,55A, RDS(ON) =6.5mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - Notebook Applications - Networking - Load Switch

文件：1.042099 Mbytes 页数：5 Pages

POTENS

博盛半导体

DIODES

美台半导体

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原厂

NEXPERIA

安世

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SOT-23-3

NEXPERIA/安世

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