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CEB80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP80N15	文件：1.86036 Mbytes Page：7 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEP80N15	文件：426.02 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263&TO-220Ffull-pakforthroughhole.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP80N15	文件：405.43 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-220Ffull-pakforthroughhole. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEW80N15	文件：573.2 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 150V,80A,RDS(ON)=19mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. Lead-freeplating;RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
FTK80N15P	文件：929.81 Kbytes Page：5 Pages	150VN-ChannelMOSFETs	FS First Silicon Co., Ltd	FS
HM80N15	文件：427.71 Kbytes Page：6 Pages	N-ChannelEnhancementModePowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HMS80N15	文件：615.75 Kbytes Page：6 Pages	N-ChannelSuperTrenchPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HMS80N15D	文件：526.31 Kbytes Page：5 Pages	N-ChannelSuperTrenchPowerMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IXFH80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
IXFH80N15Q	文件：372.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK80N15	文件：324.72 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
IXFR80N15Q	文件：47.12 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(	IXYS IXYS Integrated Circuits Division	IXYS
IXFT80N15Q	文件：125.29 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancheenergyandcurrentrated •Fas	IXYS IXYS Integrated Circuits Division	IXYS
RU80N15Q	文件：495.95 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS
RU80N15R	文件：495.95 Kbytes Page：11 Pages	N-ChannelAdvancedPowerMOSFET	RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司	RUICHIPS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	PDF80N15	POTENS/博盛	23+	TO220F	98000	原装现货假一罚十	询价
深圳市百诺芯科技有限公司	PDF930003	DIODES/美台	23+	NA	12730	原装正品代理渠道价格优势	询价
深圳市高捷芯城科技有限公司	PDF930003	DIODES(美台)	23+	SMD50326P	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
贸泽芯城（深圳）电子科技有限公司	PDFB025150	NICHTEK			96332	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳兆威电子有限公司	PDFB033150-SOD923	NICHTEK	23+	SOD923	999999	原装正品现货量大可订货	询价
深圳市明嘉莱科技有限公司	PDFB033150-SOD923	NICHTEK	24+	SOD923	860000	明嘉莱只做原装正品现货	询价
深圳市晨豪科技有限公司	PDFB033150-SOD-923	NICHTEK	23+	SOD-923	89630	当天发货全新原装现货	询价
深圳市卓越微芯电子有限公司	PDFB033250	NICHTEK	2020+	SOD923	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市科雨电子有限公司	PDFB033250	NICHTEK	PDFB033251	NICHTEK	6479	就找我吧!--邀您体验愉快问购元件!	询价
深圳市特莱科技有限公司	PDFB033250	PLINGSEMIC	22+21+	SOD-923	51936	16年电子元件现货供应商终端BOM表可配单提供样品	询价

更多PDF80N15供应商更新时间2024-5-1 13:26:00

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