| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PDEB2310Y | Middle & Low Voltage MOSFET | PDT | PDT | |
PDEB2310Y | MOSFETs | Potens 博盛半导体 | Potens | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ HIGH VOLTAGE CA 文件：69.3 Kbytes 页数：6 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
DUAL HOT SWAP POWER CONTROLLER WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING 文件：423.2 Kbytes 页数：22 Pages | TI 德州仪器 | TI | ||
DUAL HOT SWAP POWER CONTROLLER WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING 文件：423.2 Kbytes 页数：22 Pages | TI 德州仪器 | TI |
技术参数
- 组态：
Single
- MOS类型：
N
- VDS(V)：
20
- VGS(V)：
±10
- Vth(V)：
0.3/0.6/1
- 4.5V：
8/10
- 2.5V：
9.5/12
- 1.8V：
12/17
- Ciss(pF)：
1020
- Coss(pF)：
160
- Crss(pF)：
110
- Qg(nC)_4.5V：
16.9
- Qgs(nC)：
1.1
- Qgd(nC)：
4
- Rg W：
2
- ID(A)_Tc=25℃：
11
- ID(A)_Tc=100℃：
6.9
- PD(W)_Tc=25℃：
2.08
- ESD Diode：
O
- Schokkty Diode：
X
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN2X2-6 |
986966 |
国产 |
询价 | ||
POTENS/博盛 |
2511 |
DFN3X3 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
Potens(博盛半导体) |
2447 |
DFN3*3 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
POTENS/博盛 |
24+ |
PPAK3X3 |
98000 |
原装现货假一罚十 |
询价 |
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