首页 >PDEB2310L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
5.0–6.0GHz50WGaNPowerAmplifier KeyFeatures •FrequencyRange:5.0–6.0GHz •PSAT(PIN=25dBm):48dBm •PAE(PIN=25dBm):49 •PowerGain(PIN=25dBm):23dB •Bias:VD=50V,IDQ=300mA •PackageDimensions:7.0x7.0x0.82mm | QORVO Qorvo, Inc | QORVO | ||
5.0–6.0GHz50WGaNPowerAmplifier KeyFeatures •FrequencyRange:5.0–6.0GHz •PSAT(PIN=25dBm):48dBm •PAE(PIN=25dBm):49 •PowerGain(PIN=25dBm):23dB •Bias:VD=50V,IDQ=300mA •PackageDimensions:7.0x7.0x0.82mm | QORVO Qorvo, Inc | QORVO | ||
WIDEBANDGENERALPURPOSEAMPLIFIER ProductDescription TheRF2310isageneralpurpose,low-cost,highlinearityRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasilycascadable50Ωgainblock.ApplicationsincludeIF | RFMD RF Micro Devices | RFMD | ||
WIDEBANDGENERALPURPOSEAMPLIFIER ProductDescription TheRF2310isageneralpurpose,low-cost,highlinearityRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasilycascadable50Ωgainblock.ApplicationsincludeIF | RFMD RF Micro Devices | RFMD | ||
MidinfraredEmittingLaserDiode | ROCHESTERRochester Electronics 罗切斯特罗切斯特电子公司 | ROCHESTER | ||
midinfraredemittinglaserdiode | ROITHNER Roithner LaserTechnik GmbH | ROITHNER | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=3A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET Feature Rds(on) | RECTRON Rectron Semiconductor | RECTRON | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN1310,RN1311 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
VoltageControlledOscillator | MINI Mini-Circuits | MINI |
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