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PDD6912

60V N-Channel MOSFETs

Features - 60V,11A, RDS(ON) =75mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - Power Tools Applications - Motor Drive - LED Lighting

文件:976.41 Kbytes 页数:5 Pages

POTENS

博盛半导体

PDD6912

Middle & Low Voltage MOSFET

PDT

PDT

PDD6912

MOSFETs

Potens

博盛半导体

PT6912A

12 Watt 5V/3.3V Input Plus to Minus Voltage Converter

文件:131.53 Kbytes 页数:7 Pages

TI

德州仪器

SDM6912

Dual N-Channel E nhancement Mode F ield E ffect Transistor

[SamHop] FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件:429.95 Kbytes 页数:5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

STM6912

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件:554.92 Kbytes 页数:7 Pages

SAMHOP

三合微科

技术参数

  • 组态:

    Single

  • MOS类型:

    N

  • VDS(V):

    60

  • VGS(V):

    ±20

  • Vth(V):

    1.2/1.8/2.5

  • RDS(ON)(mΩ)max.at VGS=10V:

    60/75

  • 4.5V:

    70/90

  • Ciss(pF):

    500

  • Coss(pF):

    45

  • Crss(pF):

    16

  • Qg(nC)_10V:

    9.3

  • Qgs(nC):

    2.1

  • Qgd(nC):

    1.8

  • Rg W:

    2

  • EAS (mJ):

    25

  • ID(A)_Tc=25℃:

    11

  • ID(A)_Tc=100℃:

    7

  • PD(W)_Tc=25℃:

    25

  • ESD Diode:

    X

  • Schokkty Diode:

    X

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
TO252
986966
国产
询价
POTENS/博盛
2511
TO252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
POTENS/博盛
24+
TO252
98000
原装现货假一罚十
询价
更多PDD6912供应商 更新时间2026-4-10 14:01:00