首页 >PDA90N15>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

CEB90N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEF90N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP90N15

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

FKBA90N15

N-Ch150VFastSwitchingMOSFETs

GeneralDescription AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications LoadSwitch LEDApplications NetworkingApplications QuickCharger

FETEKFETek Technology Corp.

台湾东沅东沅科技股份有限公司

FKP90N15

N-Ch150VFastSwitchingMOSFETs

GeneralDescription ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫LowRDS(ON) ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫LoadSwitch ⚫LEDApplications ⚫NetworkingApplications ⚫QuickCharger

FETEKFETek Technology Corp.

台湾东沅东沅科技股份有限公司

FQA90N15

N-ChannelPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA90N15

N-ChannelPowerMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQA90N15

N-ChannelPowerMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQH90N15

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.018Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQH90N15

N-ChannelPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格