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SIHFR9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210	文件：888.74 Kbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHFR9210T	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHFR9210TA	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TA	文件：4.45842 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TA	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TA	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TL	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHFR9210TLA	文件：4.45842 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TLA	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TLA	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFR9210TLA	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU9210	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU9210	文件：4.45842 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
SIHFU9210	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SIHFU9210	文件：888.74 Kbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9210,SiHFR9210) •Straightlead(IRFU9210,SiHFU9210) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SMP9210	文件：171.55 Kbytes Page：10 Pages	Dual10-bitNonvolatileDAC INTRODUCTION TheSMP9210,-11,-12trioareserialinput,voltageoutput,dual10-Bitdigitaltoanalogconverters.Theycanoperatefromasingle2.7Vto5.5Vsupply.Internalprecisionbuffersswingrail-to-railwithaninputreferencerangefromgroundtothepositivesupply. FEATURES ●Two	SUMMIT SUMMIT	SUMMIT

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福安瓯科技有限公司	PD9220	GINJET	22+	QFP	1000	强调现货,随时查询!	询价
深圳市一线半导体有限公司	PD9220		95	QFP32	3000	公司存货	询价
深圳市佳鑫美电子科技有限公司	PD9220	GINJET	22+	QFP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市英卓尔科技有限公司	PD9220	GINJET	20+	QFP32	500	样品可出,优势库存欢迎实单	询价
深圳市富芯乐电子科技有限公司	PD9220	GINJET	22+	QFP	3000	原装现货	询价
深圳市宏捷佳电子科技有限公司	PD9220	GINJET	2023+	QFP	50000	原装现货	询价
绿盛电子(香港)有限公司	PD9267	PD	2015+	SOT23-6	29898	专业代理DC/DC升压IC,型号齐全,公司优势产品	询价
深圳市粤骏腾电子科技有限公司	PD9267	PD	23+	SOT23-6	333652	升压IC原装现货有优势	询价
深圳市粤科源兴科技有限公司	PD93-21	EVERLIGH	13+	SMD	15828	原装分销	询价
深圳市华斯顿科技有限公司	PD93-21	EVERLIGH原	22+23+	SMD	30659	绝对原装正品全新进口深圳现货	询价

更多PD9210EAC供应商更新时间2024-6-17 17:16:00

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