PD55008L-E中文资料8W 12.5V 500MHz LDMOS in PowerFLAT plastic package数据手册ST规格书

描述 Description

The PD55008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12V in common source mode at frequencies up to 1GHz.
PD55008L-E boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD55008LE’s superior linearity performance makes it an ideal solution for car mobile radio.

特性 Features

In compliance with 2002/95/EC european directive
Supplied in tape and reel of 3K units
Excellent thermal stability
P
OUT = 8W with 17dB gain @ 500MHz / 12.5V
Common source configuration
New leadless plastic package
Integrated ESD protection

简介

PD55008L-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD55008L-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。