PDC-W210

21.5Medical-GradeLCDMonitor

PFVS.210

AxialleadedPTC-Fuses

PFVS.210.L

AxialleadedPTC-Fuses

PFVS.210.S

AxialleadedPTC-Fuses

PHN210

DualN-channelenhancementmodeTrenchMOStransistor

GENERALDESCRIPTION DualN-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Dualdevice •Lowthresholdvoltage •Fastswitching •Logiclevelcompatible •Surfacemountpackage Applications:- •Motorandrelaydrivers •d.c.to

PHN210

DualN-channelenhancementmodeTrenchMOSTMtransistor

FEATURES •Dualdevice •Lowthresholdvoltage •Fastswitching •Logiclevelcompatible •Surfacemountpackage GENERALDESCRIPTION DualN-channelenhancement modefield-effecttransistorina plasticenvelopeusing’trench’ technology. Applications:- •Motorandrelaydrivers •

PHN210T

DualN-channelTrenchMOSintermediatelevelFET

1.1Generaldescription DualintermediatelevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandben

PM210

Ultra-linearMixer

PM210

Ultra-linearMixer

PMBFJ210

N-channelfield-effecttransistors

DESCRIPTION N-channelsymmetricaljunctionfield-effecttransistorinaSOT23package. FEATURES •Highspeedswitching •Interchangeabilityofdrainandsourceconnections •Highimpedance. APPLICATIONS •Analogswitches •Choppers,multiplexersandcommutators •Audioamplifiers.