首页 >PCM1725U/DR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LNAModule | RFHIC rfhic | RFHIC | ||
LNAModule | RFHIC rfhic | RFHIC | ||
SAWFilter289MHz | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SAWFilter289.0MHz | GOLLEDGE Golledge Electronics Ltd | GOLLEDGE | ||
CrystalUnitSMD3.2x2.528.63636MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforcustomerforuseinwirelesscommunications devices,espec | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
IsolatedHighSideFETDriver | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
IsolatedHighSideFETDriver | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
IsolatedHighSideFETDriver | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION ThisµPA1725isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationsofnotebookcomputersandsoon. FEATURES •2.5-Vgatedriveandlowon-resistance RDS(on)1=21.0mΩMAX.(VGS=4.5V,ID=3.5A) RDS(on)2=22.0mΩMAX.(VGS=4. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •2.5-Vgatedriveandlowon-resistance RDS(on)1=21.0mΩMAX.(VGS=4.5V,ID=3.5A) RDS(on)2=22.0mΩMAX.(VGS=4.0V,ID=3.5A) RDS(on)3=30.0mΩMAX.(VGS=2.5V,ID=3.5A) •LowCiss:Ciss=950pFTYP. •Buil | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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