PGA849RGTR

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:±2ppm/°C(maximum) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μsatG≥½V/V –Settlingti

S849T

MOSMICforTV-TunerPrestagewith12VSupplyVoltage

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Highgain ●Biasingnetworkonchip ●Improvedcrossmodulationatgainreduction ●HighAGC-range ●SMDpackage Applications  LownoisegaincontrolledinputstagesinUHF-andVHF-tunerwith12Vsupplyvoltage.

S849TR

MOSMICforTV-TunerPrestagewith12VSupplyVoltage

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Highgain ●Biasingnetworkonchip ●Improvedcrossmodulationatgainreduction ●HighAGC-range ●SMDpackage Applications  LownoisegaincontrolledinputstagesinUHF-andVHF-tunerwith12Vsupplyvoltage.

TPADG849YKSZ

SINGLE-POLE,DOUBLE-THROWANALOGSWITCH

Features LowOn-resistance,Ron=1.7QwhenA=5V «1.8VLogicCompatibleControlPin AOverridesVCCtoAchieveTrueIsolation EvenWhenSupplyIsDead «HighOff-Isolation:-100dB@100KHz »LowChannel-to-ChannelCrosstalk: -97dB@100KHz «HighBandwidth(-3dB@700MHz)Suitable

TS849LF

INSULATIONTRANSFORMERFOR10BASE-T

TSD-849

SWITCHMODEDC/DCPOWERCONVERSIONTRANSFORMERS

XINA849DGKR

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

XINA849DR

INA849Ultra-Low-Noise(1nV/?숰z),High-Bandwidth,InstrumentationAmplifier

XPGA849RGTR

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:±2ppm/°C(maximum) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μsatG≥½V/V –Settlingti

XPGA849RGTR

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01