首页 >PCI2031PGF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NECsL-BANDSP3TSWITCH | CEL California Eastern Labs | CEL | ||
L-BANDSP3TSWITCH | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
GaAsINTEGRATEDCIRCUIT FEATURES •Lowinsertionloss:LINS=0.45dBTYP.@Vcont=2.8V/0V,f=1.0GHz :LINS=0.55dBTYP.@Vcont=2.8V/0V,f=2.0GHz •Highisolation:ISL=21dBTYP.@Vcont=2.8V/0V,f=2.0GHz •Highpower:Pin(0.1dB)=33.0dBmTYP.@Vcont=2.8V/0V,f=1.0GHz •High- | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Thin-FilmCascadableAmplifier1to2000MHz | TELEDYNE Teledyne Technologies Incorporated | TELEDYNE | ||
EmbeddedProcessingUnit | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
SingleP-Channel,-20V,-0.65A,PowerMOSFET | WILLSEMIWill Semiconductor Co.,Ltd.Shanghai 韦尔股份上海韦尔半导体股份有限公司 | WILLSEMI | ||
50V,SOT23,NPNmediumpowertransistor Features •BVCEO>50V •BVCEV>80VForwardBlockingVoltage •IC=5AhighContinuousCollectorCurrent •ICM=12APeakCollectorCurrent •LowSaturationVoltage,VCE(SAT) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
50V,SOT23,NPNmediumpowertransistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Feature •Higherpowerdissi | Zetex Zetex Semiconductors | Zetex | ||
50V,SOT23,NPNmediumpowertransistor Features •BVCEO>50V •BVCEV>80VForwardBlockingVoltage •IC=5AhighContinuousCollectorCurrent •ICM=12APeakCollectorCurrent •LowSaturationVoltage,VCE(SAT) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
50V,SOT23,NPNmediumpowertransistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Feature •Higherpowerdissi | Zetex Zetex Semiconductors | Zetex |
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