Field Stop Trench IGBT Die 750 V, 200 A

Features • AEC−Q101 Rev. D Qualified for Enhanced Reliability • Maximum Junction Temperature 175°C • Advanced FS4 Trench Technology • Positive Temperature Coefficient • Easy Paralleling • Short Circuit Rated • Very Low Saturation Voltage: VCE(SAT) = 1.45 V(Typ.) @ IC = 200 A • Optimized fo

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ONSEMI

安森美半导体

IGBT 裸片 750V 200A

750V 200A FS4 Trench IGBT bare die with a die size of 10mmx10mm • AEC-Q101 rev. D qualified for enhanced reliability\n• Maximum junction temperature 175°C\n• Positive temperature coefficient\n• Easy paralleling\n• Very low saturation voltage: VCE(SAT)=1.45V(Typ.)@IC=200A\n• Short Circuit rated\n• Optimized for motor control applications;

ONSEMI

安森美半导体

QFP208

TI/德州仪器

上传：深圳市河锋鑫科技有限公司

BGA

TI

德州仪器

上传：深圳市胜彬电子有限公司

QFP

TI

德州仪器

上传：深圳市胜彬电子有限公司