Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D1, Die

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next gener • Max Junction Temperature\n• Tj =175 °C\n• High Surge Current Capacity\n• Positive Temperature Coefficient\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

Package：模具；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 50A DIE

ONSEMI

安森美半导体

TRANSFORMERS

文件：154.78 Kbytes 页数：8 Pages

pulse

N-channel 5-phase motor drive

文件：439.21 Kbytes 页数：1 Pages

Sanken

三垦

N-channel 5-phase motor drive

文件：444.66 Kbytes 页数：1 Pages

Sanken

三垦