Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 100 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 100 A • Easy to Parallel Operation Typical Applications • Solar • Energy storage • Industrial motor control

文件：104.84 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Power Diode Bare Die

1200 V, 100 A,  Gen VII, Fast Recovery Diode • Advanced Gen VII Technology\n• Fast and Soft Recovery\n• Low Forward Voltage\n• Easy to Parallel Operation;

ONSEMI

安森美半导体

Fast Diode Rectifier Bridge Power Module

Features • Ultra fast recovery times • Soft recovery characteristics • Very low stray inductance • High blocking voltage • High current • Low leakage current • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Applicat

文件：243.6 Kbytes 页数：4 Pages

ADPOW

Diode Full Bridge Power Module

Features • Ultra fast recovery times • Soft recovery characteristics • High blocking voltage • High current • Low leakage current • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Application • Uninterruptible Power

文件：222.8 Kbytes 页数：4 Pages

Microsemi

美高森美

Full - Bridge Fast Trench Field Stop IGBT Power Module

文件：273.67 Kbytes 页数：5 Pages

ADPOW