Diode Full Bridge Power Module

Features • Ultra fast recovery times • Soft recovery characteristics • High blocking voltage • High current • Low leakage current • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Application • Uninterruptible Power

文件：222.8 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Diode Full Bridge Power Module

Microchip

微芯科技

Package：SP4；包装：散装 类别：分立半导体产品 二极管 - 桥式整流器 描述：BRIDGE RECT 1P 1.2KV 120A SP4

MICROSEMI

美高森美

Full - Bridge Fast Trench Field Stop IGBT Power Module

文件：273.67 Kbytes 页数：5 Pages

ADPOW

Full - Bridge Fast Trench Field Stop IGBT Power Module

文件：251.24 Kbytes 页数：5 Pages

MICROSEMI

美高森美

Diode – Power, Bare Die Gen VII, Fast Recovery 1200 V, 100 A

Features • Advanced Gen VII Technology • Fast and Soft Recovery • Maximum Junction Temperature 175°C • Low Forward Voltage: VF = 1.78 V (Typ.)  IF = 100 A • Easy to Parallel Operation Typical Applications • Solar • Energy storage • Industrial motor control

文件：104.84 Kbytes 页数：4 Pages

ONSEMI

安森美半导体