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FXL6408UMX

FullyConfigurable8-BitI2C-ControlledGPIOExpander

ONSEMION Semiconductor

安森美半导体安森美半导体公司

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HD-6408

CMOSAsynchronousSerialManchesterAdapter

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoder forcreatingaveryhighspeedasynchronousserialdatabus. TheEncoderconvertsserialNRZdata(typicallyfromashift register)toManchesterIIencodeddata,addingasyncpulse andparitybit.TheDecoderrecognizesthissyncpulseand

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HM6408

N-ChannelEnhancementModePowerMOSFET

Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HX6408

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-EHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ERM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408-ERN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KEHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

HX6408KENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

详细参数

  • 型号:

    PCA6408ABS

  • 功能描述:

    接口-I/O扩展器 8bit IO Expander Low Voltage HVQFN

  • RoHS:

  • 制造商:

    NXP Semiconductors

  • 最大工作频率:

    100 kHz

  • 工作电源电压:

    1.65 V to 5.5 V

  • 工作温度范围:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    HVQFN-16

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
NXP/恩智浦
QFN
86541
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NXP USA Inc.
21+
16-HVQFN(3x3)
56200
一级代理/放心采购
询价
NXP/恩智浦
23+
16-VFQFN
90000
只做原厂渠道价格优势可提供技术支持
询价
NXP(恩智浦)
2117+
HVQFN-16(3x3)
315000
1个/圆盘一级代理专营品牌!原装正品,优势现货,长期
询价
NXP
20+
DFN-16
4854
就找我吧!--邀您体验愉快问购元件!
询价
NXP(恩智浦)
2021+
HVQFN-16(3x3)
499
询价
NXP(恩智浦)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
NXP USA Inc.
21+
16-VFQFN 裸露焊盘
6000
正规渠道/品质保证/原装正品现货
询价
恩智浦
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
NXP/恩智浦
23+
NA
9000
原装正品假一罚百!可开增票!
询价
更多PCA6408ABS供应商 更新时间2024-6-17 16:35:00