650 V Discrete Silicon Carbide MOSFETs

Low On-State Resistance over TemperatureLow Parasitic CapacitancesFast Diode with ultra low reverse recoveryHigh Temperature Operation (TJ = 175°C)Kelvin Source PinIndustry Standard Through-Hole & SMT Packages • Low On-State Resistance over Temperature\n• Low Parasitic Capacitances\n• Fast Diode with ultra low reverse recovery\n• High Temperature Operation (TJ = 175°C)\n• Kelvin Source Pin\n• Industry Standard Through-Hole & SMT Packages;

Wolfspeed(CREE)

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：650V MOSFET

WOLFSPEED

Silicon Carbide Power MOSFET

文件：961.61 Kbytes 页数：11 Pages

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Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requiremen

文件：960.72 Kbytes 页数：11 Pages

WOLFSPEED

Silicon Carbide Power MOSFET

文件：1.08429 Mbytes 页数：12 Pages

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