UPA2708GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2708GRisN-channelMOSFieldEffect TransistordesignedforDC/DCconverterandpower managementapplicationsofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=5.5mΩMAX.(VGS=10V,ID=9.0A) RDS(on)2=7.5mΩMAX.(VGS=4.5V,ID=9.0A) •Low

UPA2708TP

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2708TPwhichhasaheatspreaderisNchannel MOSFieldEffectTransistordesignedfor DC/DCconverterandpowermanagementapplications ofnotebookcomputer. FEATURES •Lowon-stateresistance RDS(on)1=5.5mΩMAX.(VGS=10V,ID=9.0A) RDS(on)2=7.5mΩMAX.(VGS=

UPA2708TP

SWITCHINGN-CHANNELPOWERMOSFET

UPC2708T

3GHzSILICONMMICWIDE-BANDAMPLIFIER

DESCRIPTION TheUPC2708TandUPC2711TareSiliconMonolithicintegratedcircuitsmanufacturedusingtheNESATIIIprocess.Thesedevicesaresuitableasbufferamplifiersforwide-bandapplications.Theyaredesignedforlowcostgainstagesincellularradios,GPSreceivers,DBStuners,PCN,and

UPC2708TB

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •High-densitysurfacemounting:6-pinsuperminimoldpackage(2.0´1.25´0.9mm) •Widebandresponse:fu=2.9GHzTYP.@3dBbandwidth •Mediumoutputpower:PO(sat)=+10dBmTYP.@f=1GHzwithexternalinductor •Supplyvoltage:VCC=4.5to5.5V •Powergain:GP=15

UPC2708TB

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

UPC2708TB

5V,SUPERMINIMOLDWIDEBANDSIRFICAMPLIFIER

UPC2708TB

5V,SILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

UPC2708TB

BIPOLARANALOGINTEGRATEDCIRCUIT

UPC2708TB

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

DESCRIPTION TheµPC2708TBisasiliconmonolithicintegratedcircuitdesignedasbufferamplifierforBS/CStuners.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. TheµPC2708TBhascompatiblepinconnectionsandperformancetoµPC2708Tofconventional