3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

文件：140.58 Kbytes 页数：6 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional

文件：99.12 Kbytes 页数：16 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.9 GHz TYP. @ 3 dB bandwidth • Medium output power : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 15

文件：231.2 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：C1D；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.9 GHz TYP. @ 3 dB bandwidth • Medium output power : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 15

文件：231.2 Kbytes 页数：18 Pages

RENESAS

瑞萨

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional

文件：99.12 Kbytes 页数：16 Pages

NEC

瑞萨

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

文件：140.58 Kbytes 页数：6 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：416.77 Kbytes 页数：13 Pages

CEL

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：320.16 Kbytes 页数：14 Pages

CEL

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：100.58 Kbytes 页数：16 Pages

NEC

瑞萨

5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER

文件：211.39 Kbytes 页数：8 Pages

CEL