PC100 SDRAM MODULE Preliminary

GENERAL DESCRIPTION The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy

文件：151.64 Kbytes 页数：10 Pages

Samsung

三星

Plate Capacitors with Contoured Rim - Class 1 Ceramic

文件：122.13 Kbytes 页数：3 Pages

VishayVishay Siliconix

威世科技

PC100 SDRAM MODULE Preliminary

Samsung

三星

DIODE MODULE 100A/1200 to 1600V

DIODE MODULE 100A/1200 to 1600V FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：219.32 Kbytes 页数：3 Pages

NIEC

DIODE MODULE 100A/1200 to 1600V

DIODE MODULE 100A/1200 to 1600V FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：219.32 Kbytes 页数：3 Pages

NIEC

DIODE MODULE 100A/800V

DIODE MODULE 100A/800V FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：194.81 Kbytes 页数：3 Pages

NIEC

Fast Recovery Diode

FRD 100A Avg 200 Volts

文件：321.35 Kbytes 页数：2 Pages

KSS

京瓷

100Avg, 200 Volts

FRD 100A Avg 200 Volts

文件：220.29 Kbytes 页数：2 Pages

NIEC

FRD MODULE

FEATURES ○ Isolated Base ○ Dual Diodes - Cathode Common : PC100F5 Doubler : PD100F5 ○ Super Fast Recovery ○ High Surge Capability

文件：30.01 Kbytes 页数：2 Pages

NIEC

FRD 100A AVG 500 VOLTS

FEATURES ○ Isolated Base ○ Dual Diodes - Cathode Common : PC100F5 Doubler : PD100F5 ○ Super Fast Recovery ○ High Surge Capability

文件：34.68 Kbytes 页数：8 Pages

NIEC