丝印：AG；Package：HUSON3；100 V, 2.7 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS8510PA. Features and benefits ■ Low collector-emitter saturatio

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NEXPERIA

安世

100 V, 2.7 A PNP low VCEsat (BISS) transistor

文件：175.73 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 2.7 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n NPN complement: PBSS8510PA. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Leadless small SMD plastic package with m;

Nexperia

安世

Package：3-PowerUDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 2.7A 3HUSON

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