100 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. Features ■ SOT363 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency leading to less heat generation. Applications ■ Major application

文件：100.79 Kbytes 页数：13 Pages

PHI

飞利浦

100 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. Features ■ SOT363 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency leading to less heat generation Applications ■ Major application s

文件：176.35 Kbytes 页数：13 Pages

恩XP

丝印：91；Package：SOT363；100 V, 1 A PNP low VCEsat (BISS) transistor

Features * SOT363 package * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation

文件：290.19 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 1 A PNP low VCEsat (BISS) transistor

文件：176.35 Kbytes 页数：13 Pages

PHI

飞利浦

100 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. • SOT363 package\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 1A 6TSSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司