丝印：71；Package：SC-74；40 V PNP low VCEsat (BISS) transistor

Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current capability IC (DC) * Up to 15 A peak current * Very low collector-emitter saturation resistance * High efficiency due to less heat generation

文件：311.04 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V PNP low VCEsat (BISS) transistor

文件：197.57 Kbytes 页数：13 Pages

PHI

飞利浦

40 V PNP low V_CEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4440D. • Ultra low collector-emitter saturation voltage VCEsat\n• 4 A continuous collector current capability IC (DC)\n• Up to 15 A peak current\n• Very low collector-emitter saturation resistance\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 4A 6TSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司