丝印：3P；Package：DFN2020D-6；20V, 2 A PNP/PNP low VCEsat (BISS) double transistor

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20V, 2 A PNP/PNP low VCEsat double transistor

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4220PANS • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• High energy efficiency du;

Nexperia

安世

20V, 2A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit

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PHI

飞利浦

20 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • A

文件：186.65 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 2 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Q

文件：234.68 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司