丝印：2S；Package：DFN2020-6；120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. 1.2 Features and benefits • Very low coll

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120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

文件：254 Kbytes 页数：17 Pages

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120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

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安世

120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

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