丝印：A6；Package：HUSON3；20 V, 6 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5620PA. Features and benefits ■ Low collector-emitter saturatio

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丝印：A6；Package：DFN2020-3；20 V, 6 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5620PA 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High col

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20 V, 6 A NPN low VCEsat (BISS) transistor

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20 V, 6 A NPN low V_CEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5620PA. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Exposed heat sink for excellent thermal and electrical conductivity\n• Leadless small SMD plastic package with m;

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20 V, 6 A NPN low VCEsat transistor

NPN low VCEsat transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.\n PNP complement: PBSS5620PA

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Package：3-PowerUDFN；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 6A 3HUSON

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