40 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Mediu

文件：103.92 Kbytes 页数：13 Pages

PHI

飞利浦

40 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Mediu

文件：206.79 Kbytes 页数：13 Pages

恩XP

丝印：1B；Package：SOT89；40 V, 5 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement: PBSS5540X. 2. Features and benefits • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat gener

文件：242.7 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

NPN low VCEsat (BISS) transistor 40 V, 5 A

文件：206.79 Kbytes 页数：13 Pages

PHI

飞利浦

40 V, 5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a medium power SOT89 (SC-62) package.\n PNP complement: PBSS5540X. • High hFE and low VCEsat at high current operation\n• High collector current capability: IC maximum 4 A\n• High efficiency leading to less heat generation.\n• AEC-Q101 qualified;

Nexperia

安世

功率三极管

YJ

益嘉源

NPN小信号三极管

CBI

创基电子

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 4A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司