20 V, 5 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 5 A • Higher efficiency leading to less heat generation. APPLICATIONS • Med

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PHI

飞利浦

丝印：1F；Package：SC-62；20 V, 5 A NPN low VCEsat (BISS) transistor

FEATURES •High hFE and low VCEsat at high current operation •High collector current capability: IC maximum 5 A •Higher efficiency leading to less heat generation. APPLICATIONS •Medium power peripheral drivers, e.g. fans and motors •Strobe flash units for DSC and mobile phones •Inverter ap

文件：443.94 Kbytes 页数：14 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

NPN low VCEsat (BISS) transistor 20 V, 5 A

文件：206.12 Kbytes 页数：13 Pages

PHI

飞利浦

20 V, 5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package.\n PNP complement: PBSS5520X. • High hFE and low VCEsat at high current operation\n• High collector current capability: IC maximum 5 A\n• Higher efficiency leading to less heat generation.\n• AEC-Q101 qualified;

Nexperia

安世

20 V, 5 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5520X-Q

Nexperia

安世

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 5A SOT89

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 5A SOT89

Nexperia USA Inc.