首页 >PBSS4350TIC>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

RO4350B

GaNDohertyHybridAmplifier

RFHIC

rfhic

RO4350B

GaNDohertyHybridAmplifier

Description Accommodatingthefutureof4G/LTEsmallcells,RFHICintroducesRTH23007-10amplifierfabricatedusinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess.Thishighperformanceamplifierachieveshighefficiencyof45,andpowers7Woverthefrequencyrange

RFHIC

rfhic

RO4350B

GaNHybridPowerAmplifier

HONGFAHongfa Technology

宏发电声厦门宏发电声股份有限公司

RO4350B

RFPowerFieldEffectTransistorsN--ChannelEnhancement--ModeLateralMOSFETs

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RO4350B

RFPowerLDMOSTransistors

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

S4350

SiliconPowerRectifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

S4350

SiliconPowerRectifier

SiliconPowerRectifier •Softrecovery •GlassPassivatedDie •2500AmpsSurgeRating •Glasstometalsealconstruction •VRRMto1600V

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SFH4350

HighPowerInfraredEmitter(850nm)

OSRAMOSRAM GmbH

艾迈斯欧司朗欧司朗光电半导体

SFH4350

HighPowerInfraredEmitter

OSRAMOSRAM GmbH

艾迈斯欧司朗欧司朗光电半导体

SFH4350

IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung

OSRAMOSRAM GmbH

艾迈斯欧司朗欧司朗光电半导体

供应商型号品牌批号封装库存备注价格