50 V, 2 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5250X. FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced prin

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PHI

PHI

50 V, 2 A NPN low VCEsat (BISS) transistor

FEATURES · SOT89 (SC-62) package · Low collector-emitter saturation voltage VCEsat · High collector current capability: IC and ICM · Higher efficiency leading to less heat generation · Reduced printed-circuit board requirements. APPLICATIONS · Power management – DC/DC converters – Suppl

文件：83.32 Kbytes 页数：9 Pages

NEXPERIA

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Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

NPN low VCEsat (BISS) transistor 50 V, 2 A

文件：153.1 Kbytes 页数：9 Pages

PHI

PHI

50 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT89 plastic package.\n PNP complement: PBSS5250X. • SOT89 (SC-62) package\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• Higher efficiency leading to less heat generation\n• Reduced printed-circuit board requirements.\n• AEC-Q101 qualified;

Nexperia

安世

50 V, 2 A NPN low VCEsat transistor

NPN low VCEsat transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5250X

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 2A SOT89

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 2A SOT89

Nexperia USA Inc.