丝印：S4240Z；Package：SC-73；40 V, 2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabilit

文件：705.08 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 2 A NPN low VCEsat (BISS) transistor

文件：217.15 Kbytes 页数：14 Pages

PHI

飞利浦

40 V, 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS5240Z • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：TRANS NPN 40V 2A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司