40 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packag

文件：52.64 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：42；Package：SOT363；40 V low VCEsat NPN transistor

FEATURES •Low collector-emitter saturation voltage •High current capability •Improved device reliability due to reduced heat generation •Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS •Supply line switching circuits •Battery management

文件：460.84 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V low VCEsat NPN transistor

文件：267.42 Kbytes 页数：7 Pages

PHI

飞利浦

40 V low VCEsat NPN transistor

NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.\n PNP complement: PBSS5240Y. • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.\n• AEC-Q101 qualified;

Nexperia

安世

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A 6TSSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司