丝印：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T-Q. 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat generation • Qualified according

文件：210.05 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：ZT；Package：SOT23；40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

文件：202.19 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5140T 2. Features and benefits • Low collector-emitter saturation voltage • High current capabilities • Improved device reliability due to reduced heat genera

文件：202.19 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5140T-Q. • Low collector-emitter saturation voltage\n• High current capabilities\n• Improved device reliability due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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安世