30 V, 1 A NPN/PNP low VCEsat (BISS) transistor

General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. Features and benefits • Very low collector-emitte

文件：345.74 Kbytes 页数：21 Pages

恩XP

丝印：2F；Package：DFN2020-6；30 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. 2. Features and benefits • Very low collect

文件：853.27 Kbytes 页数：21 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

30 V, 1 A NPN/PNP low VCEsat (BISS) transistor

文件：345.74 Kbytes 页数：21 Pages

PHI

飞利浦

30 V, 1 A NPN/PNP low VCEsat (BISS) transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世