60 V, 5 A PNP low VCEsat transistor

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Nexperia

安世

60 V, 5.7 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB)

文件：721.41 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 5.7 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Hig

文件：292.72 Kbytes 页数：14 Pages

NEXPERIA

安世

B - Indoor keyed

文件：107.13 Kbytes 页数：4 Pages

LEMO

雷莫

B - Indoor keyed

文件：111.29 Kbytes 页数：4 Pages

LEMO

雷莫

B - Indoor keyed

文件：134.34 Kbytes 页数：4 Pages

LEMO

雷莫