PBSS4021PX

20 V, 6.2 A PNP low V_CEsat (BISS) transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4021NX.\n

PBSS4021PX

丝印：6E；Package：SC-62；20 V, 6.2 A PNP low VCEsat (BISS) transistor

PBSS4021PX-Q

20 V, 6.2 A PNP low VCEsat transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PNP low VCEsat transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4021NX-Q

PBSS4021PX,115

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 6.2A SOT89

Nexperia USA Inc.

PBSS4032PT

NEXPERIA
原厂