PBSS303ND

丝印：AE；Package：SC-74；60 V, 3 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PBSS303ND

60 V, 3 A NPN low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualified\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS303PD.\n

PBSS303ND

Low VCEsat (BISS) transistors

ETC

PBSS303ND-Q

丝印：AE；Package：TSOP6；60 V, 3 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PD-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc

PBSS303ND-Q

60 V, 3 A NPN low VCEsat transistor;

PBSS303ND,115

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 1A 6TSOP

ETC