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PBRP123ET

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123ET-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123YT

PNP800mA,40VBISSRET;R1=2.2kW,R2=10kW

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

PBRP123YT

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123YT-Q

40V,600mAPNPPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturatio

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PC123

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

PC123

EuropeanSafetyStandardApprovedTypeLongCreepageDistancePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

PC123A

DEVICESPECIFICATIONFORPHOTOCOUPLER

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

PC123B

DIP4pinReinforcedInsulationTypePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

PC123F

EuropeanSafetyStandardApprovedTypeLongCreepageDistancePhotocoupler

■Description PC123SeriescontainsanIREDopticallycoupledtoaphototransistor. Itispackagedina4-pinDIP,availableinwide-leadspacingoptionandSMTgullwinglead-formoption. Input-outputisolationvoltage(rms)is5.0kV. CTRis50to400atinputcurrentof5mA. ■Features 1.4-

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

供应商型号品牌批号封装库存备注价格
PHILIPS
05+
SOT23
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
PHILIPS
23+
SOT23
5500
原厂原装正品
询价
PHILIPS
2023+
SMD
6000
安罗世纪电子只做原装正品货
询价
PHILIPS
2023+
SOT23
8800
正品渠道现货 终端可提供BOM表配单。
询价
NXP
22+
NA
45000
加我QQ或微信咨询更多详细信息,
询价
NXP USA Inc.
2022+
SMT3; MPAK
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NXP USA Inc.
25+
TO-236-3 SC-59 SOT-23-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Nexperia/安世
17+
SOT-23
3000
原装正品现货,可开发票,假一赔十
询价
NXP/恩智浦
24+
QFN
1310
原装现货100%现货
询价
TI/德州仪器
23+
SOT-223
69820
终端可以免费供样,支持BOM配单!
询价
更多PBRN123Y_SER供应商 更新时间2025-5-22 16:35:00