丝印：V9215Z；Package：SC-73；150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * AEC-Q101 qualified * Medium power SMD plastic package

文件：273.25 Kbytes 页数：13 Pages

NEXPERIA

安世

150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor

文件：159.74 Kbytes 页数：12 Pages

PHI

飞利浦

150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8215Z. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n• Medium power SMD plastic package;

Nexperia

安世

150 V, 2 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBHV8215Z-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Medium power SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 2A SOT223

Nexperia USA Inc.